Ukushisa okuzenzekelayo kunye nokulawula ukufuma
Iqondo lokushisa kunye nomswakama wegumbi elicocekileyo limiselwa ngokukodwa ngokweemfuno zenkqubo, kodwa phantsi kwemeko yokuba iimfuno zenkqubo zidibene, induduzo yomntu kufuneka ithathelwe ingqalelo.Ngokunyuka kweemfuno zococeko lomoya, kukho umkhwa wokuba inkqubo ineemfuno ezingqongqo ngakumbi kubushushu kunye nokufuma.
Njengoko ukuchaneka komatshini kuya kuphucuka ngakumbi, iimfuno zoluhlu lokuguquguquka kobushushu ziya zincinci kwaye zincinci.Ngokomzekelo, kwinkqubo yokuvezwa kwe-lithography yokuveliswa kwesekethe enkulu edibeneyo, umahluko phakathi kwe-coefficient yokwandisa i-thermal yeglasi kunye ne-silicon wafer njengoko i-diaphragm kufuneka ibe yincinci kwaye incinci.I-silicon wafer enobubanzi be-100μm iya kubangela ukwandiswa komgca we-0.24μm xa ubushushu bunyuka nge-1 degree.Ngoko ke, kufuneka ibe neqondo lokushisa elingaguqukiyo le-± 0.1 degrees.Ngelo xesha, ixabiso lomswakama lifunwa ngokubanzi ukuba libe liphantsi, kuba emva kokuba umntu eshushu, imveliso iya kungcoliswa, ngakumbi kwii-workshops ze-semiconductor ezoyika i-sodium, olu hlobo locweyo olucocekileyo alufanele lube ngaphezu kwama-25 degrees.
Ukufuma okugqithisileyo kubangela iingxaki ezingakumbi.Xa ukufuma okunxulumeneyo kudlula i-55%, ukuxinana kuya kwenzeka eludongeni lombhobho wamanzi okupholisa.Ukuba kwenzeka kwisixhobo esichanekileyo okanye isiphaluka, siya kubangela iingozi ezahlukeneyo.Kulula ukugqwala xa ukufuma okungama-50%.Ukongeza, xa umswakama uphezulu kakhulu, uthuli oluphezu kwe-silicon wafer luya kubhengezwa ngamachiza ngamamolekyuli amanzi emoyeni ukuya phezulu, okunzima ukususa.Okukhona kuphezulu ukufuma okunxulumeneyo, kokukhona kuya kuba nzima kakhulu ukususa ukuncamatheliswa, kodwa xa ukufuma okunxulumeneyo kungaphantsi kwe-30%, amasuntswana nawo abhengezwa ngokulula kumphezulu ngenxa yesenzo samandla e-electrostatic, kunye nenani elikhulu le-semiconductor. izixhobo zityekele ekonakaleni.Olona luhlu lobushushu bokuvelisa i-silicon wafer yi-35 ~ 45%.
